In this paper, we present the optimized performances of indium gallium arsenide (InGaAs)-based compound junctionless field-effect transistors (JLFETs) using an indium phosphide (InP) buffer layer. The proposed InGaAs-InP material combination with little lattice mismatch provides a significant improvement in current drivability securing various potential applications. Device optimization is performed in terms of primary dc parameters and characterization is investigated by two-dimensional (2D) technology computer-aided design simulations. The optimization variables were the channel doping concentration (Nch), the buffer doping concentration (Nbf), and the channel thickness (Tch). For the optimally designed InGaAs JLFET, on-state current (Ion) of 325 µA µm−1, subthreshold swing (S) of 80 mV dec−1, and current ratio (Ion/Ioff) of 109 were obtained. In the end, the results are compared with the data of silicon (Si)-based JL MOSFETs to confirm the improvements.
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