Incorporation of Arsenic and Gallium in InP Layers in GaInAs/InP Heterostructures Grown by MOVPE

The effects of arsenic (As) and gallium (Ga) incorporation in InP layers in GaInAs/InP heterostructures grown by low-pressure metal-organic vapor phase epitaxy (LP-MOVPE) on lattice parameter and band-gap energy of InP layers were studied. It was found that As and Ga incorporation is prolonged during InP growth after arsine (AsH3) and triethylgallium (TEG) flows are turned off, resulting in a lowering of the band gap energy and change in the lattice parameter of the InP layers. This incorporation is considered to originate from both desorption and diffusion of their outgassing sources produced during the growth of a thick GaInAs layer.

Source:IOPscience

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The influence of argon pressure and RF power on the growth of InP thin films

Indium phosphide thin films were grown onto glass substrates by RF magnetron sputtering. In this paper, we present a study on the role of argon pressure and rf power on magnetron sputtered InP films. These sputtering parameters are shown to affect the deposition rate, structure, morphology, electrical and optical properties of InP films. Single-phase, nearly stoichiometric and polycrystalline films exhibiting zinc blende structure with strong preferred orientation along (1 1 1) were observed at an argon pressure of 0.4 Pa, by keeping the substrate temperature (448 K) and RF power (150 W) constant. Hall measurements indicated n-type conductivity in InP films. The optical absorption studies indicated a direct band gap of 1.35 eV.

Source:IOPscience

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Towards a monolithically integrated III–V laser on silicon: optimization of multi-quantum well growth on InP on Si

High-quality InGaAsP/InP multi-quantum wells (MQWs) on the isolated areas of indium phosphide on silicon necessary for realizing a monolithically integrated silicon laser is achieved. Indium phosphide layer on silicon, the pre-requisite for the growth of quantum wells is achieved via nano-epitaxial lateral overgrowth (NELOG) technique from a defective seed indium phosphide layer on silicon. This technique makes use of epitaxial lateral overgrowth (ELOG) from closely spaced (1 µm) e-beam lithography-patterned nano-sized openings (~300 nm) by low-pressure hydride vapor phase epitaxy. A silicon dioxide mask with carefully designed opening patterns and thickness with respect to the opening width is used to block the defects propagating from the indium phosphide seed layer by the so-called necking effect. Growth conditions are optimized to obtain smooth surface morphology even after coalescence of laterally grown indium phosphide from adjacent openings. Surface morphology and optical properties of the NELOG indium phosphide layer are studied using atomic force microscopy, cathodoluminescence and room temperature µ-photoluminescence (µ-PL) measurements. Metal organic vapor phase epitaxial growth of InGaAsP/InP MQWs on the NELOG indium phosphide is conducted. The mask patterns to avoid loading effect that can cause excessive well/barrier thickness and composition change with respect to the targeted values is optimized. Cross-sectional transmission electron microscope studies show that the coalesced NELOG InP on Si is defect-free. PL measurement results indicate the good material quality of the grown MQWs. Microdisk (MD) cavities are fabricated from the MQWs on ELOG layer. PL spectra reveal the existence of resonant modes arising out of these MD cavities. A mode solver using finite difference method indicates the pertinent steps that should be adopted to realize lasing.

Source:IOPscience

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