Defects Induced by Wafer Processing and Thermal Treatment in InP Probed with Monoenergetic Positrons

Variable-energy positron-beam studies have been made on InP single crystals. Doppler broadening profiles of the positron annihilation and the mean diffusion length of positrons were found to be sensitive to defects under the subsurface region. For a specimen after high-quality polishing, vacancy-type defects with a concentration of 1018 cm-3 were observed in the range of 0~400 nm. For the specimen after heat treatment, a damaged layer introduced by dephosphorization was observed. An overlayer containing monovacancies, with a thickness of 140 nm, was found to be formed after 450°C annealing.

Source:IOPscience

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300 mm InGaAs-on-insulator substrates fabricated using direct wafer bonding and the Smart Cut™ technology

This paper reports the first demonstration of 300 mm In0.53Ga0.47As-on-insulator (InGaAs-OI) substrates. The use of direct wafer bonding and the Smart Cut™ technology lead to the transfer of high quality InGaAs layer on large Si wafer size (300 mm) at low effective cost, taking into account the reclaim of the III–V on Si donor substrate. The optimization of the three key building blocks of this technology is detailed. (1) The III–V epitaxial growth on 300 mm Si wafers has been optimized to decrease the defect density. (2) For the first time, hydrogen-induced thermal splitting is made inside the indium phosphide (InP) epitaxial layer and a wide implantation condition ranges is observed on the contrary to bulk InP. (3) Finally a specific direct wafer bonding with alumina oxide has been chosen to avoid outgas diffusion at the alumina oxide/III–V compound interface.

Source:IOPscience

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send us email at angel.ye@powerwaywafer.com or powerwaymaterial@gmail.com