Epitaxial CdS Layers Deposited on InP Substrates

The CdS layers were deposited on InP substrates by using the (H2–CdS) vapor growth technique. The single crystal layers of hexagonal CdS were obtained on InP (111), (110) and (100) with the following heteroepitaxial relationships; (0001) CdS//(111) InP and [bar 12bar 10] CdS//[01bar 1] InP, (01bar 13) CdS//(110) InP and [bar 2110] CdS//[bar 110] InP, (30bar 34) CdS//(100) InP and [bar 12bar 10] CdS//[01bar 1] InP. The CdS layers deposited on InP (bar 1bar 1bar 1) were identfied in terms of the twinned hexagonal crystals, twin planes of which were nearly parallel to (30bar 3bar 4) and its crystallographic equivalents. The compositional gradients were observed at the interface of the deposits and the substrates.

Source:IOPscience

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Evaluation of semi-insulating Ti-doped and Mn-doped InP for radiation detection

Semi-insulating and semiconducting InP single crystals without intentional doping and doped with Fe, co-doped with Zn and Ti and doped with Mn were grown using the Czochralski technique. Hall effect measurements and deep level transient spectroscopy were used to characterize samples cut from these crystals. Two electron traps were found in undoped InP whose concentration was suppressed in Mn-doped InP. Binding energies of Fe, Ti and Mn deep level impurities were determined from the temperature-dependent Hall effect measurements. The curves of Hall coefficient versus reciprocal temperature decline from straight lines at low temperatures for InP:Fe and for InP:Ti samples due to electron and hole mixed conductance. The resistivity of InP:Ti is equal to about 106 Ωm at the lowered temperature of 230 K. This value of resistivity and the small hole capture rate of Ti makes this material suitable for radiation detection at the lowered temperature.

Source:IOPscience

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MOCVD Growth of InP on 4-inch Si Substrate with GaAs Intermediate Layer

This letter describes the heteroepitaxy of InP on Si by MOCVD. A new epitaxial structure with a thin GaAs intermediate layer (InP/GaAs/Si) is proposed to alleviate the large lattice mismatch (8.4%) between InP and Si. Using this structure, a 4-inch InP single crystal with a mirror-like surface and good thickness uniformity (Δd/d=±10%) was obtained. Residual stress in the InP film was 5.7±108 dyn/ cm2 for the InP/GaAs/Si structure, as compared to 8.3×108 dyn/cm2 for the InP directly grown on Si. This shows that the GaAs intermediate layer is also effective in reducing the residual stress in the InP epilayer.

Source:IOPscience

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