InP wafer: 2016

2016年9月26日星期一

Photoluminescence assessment of undoped semi-insulating InP wafers obtained by annealing in iron phosphide vapour

We have investigated the photoluminescence mapping characteristics of semi-insulating (SI) InP wafers obtained by annealing in iron phosphide ambience (FeP2-annealed). Compared with as-grown Fe-doped and undoped SI InP wafers prepared by annealing in pure phosphorus vapour (P-annealed), the FeP2-annealed SI InP wafer has been found to exhibit a better photoluminescence uniformity. Radial Hall measurements also show that there is a better resistivity uniformity on the FeP2-annealed SI InP wafer. When comparing the distribution of deep levels between the annealed wafers measured by optical transient current spectroscopy, we find that the incorporation of iron atoms into the SI InP suppresses the formation of a few defects. The correlation observed in this study implies that annealing in iron phosphorus ambience makes Fe atoms diffuse uniformly and occupy the indium site in the SI InP lattice. As it stands, we believe that annealing undoped conductive InP in iron phosphide vapour is an effective means to obtain semi-insulating InP wafers with superior uniformity.

Keywords: photoluminescence ; semi-insulating (SI) InP wafers; phosphide ambience (FeP2-annealed); SI InP wafers; semi-insulating InP wafers

Source: Iopscience

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2016年9月19日星期一

Semicoherent growth of Bi$_{2}$Te$_{3}$ layers on InP substrates by hot wall epitaxy

We search for optimum growth conditions to realize flat Bi $_{2}$ Te $_{3}$ layers on InP(111)B by hot wall epitaxy. The substrate provides a relatively small lattice mismatch, and so (0001)-oriented layers grow semicoherently. The temperature window for the growth is found to be narrow due to the nonzero lattice mismatch and rapid re-evaporation of Bi $_{2}$ Te $_{3}$ . The crystalline qualities evaluated by means of x-ray diffraction reveal deteriorations when the substrate temperature deviates from the optimum not only to low temperatures but also to high temperatures. For high substrate temperatures, the Bi composition increases as Te is partially lost by sublimation. We show, in addition, that the exposure of the Bi $_{2}$ Te $_{3}$ flux at even higher temperatures results in anisotropic etching of the substrates due, presumably, to the Bi substitution by the In atoms from the substrates. By growing Bi $_{2}$ Te $_{3}$ layers on InP(001), we demonstrate that the bond anisotropy on the substrate surface gives rise to a reduction in the in-plane epitaxial alignment symmetry.

Keywords: InP(001); Bi $_{2}$ Te $_{3}$ ; Bi substitution;

Source: iopscience

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2016年9月11日星期日

Investigation of room-temperature wafer bonded GaInP/GaAs/InGaAsP triple-junction solar cells

Highlights

•High quality InGaAsP material with a bandgap of 1.0 eV was grown by MBE.
•Room-temperature wafer-bonded GaInP/GaAs/InGaAsP SCs were fabricated.
•An efficiency of 30.3% of wafer-bonded triple-junction SCs was obtained.

We report on the fabrication of III–V compound semiconductor multi-junction solar cells using the room-temperature wafer bonding technique. GaInP/GaAs dual-junction solar cells on GaAs substrate and InGaAsP single junction solar cell on InP substrate were separately grown by all-solid state molecular beam epitaxy (MBE). The two cells were then bonded to a triple-junction solar cell at room-temperature. A conversion efficiency of 30.3% of GaInP/GaAs/InGaAsP wafer-bonded solar cell was obtained at 1-sun condition under the AM1.5G solar simulator. The result suggests that the room-temperature wafer bonding technique and MBE technique have a great potential to improve the performance of multi-junction solar cell.

Graphical abstract

Keywords: Multijunction solar cell; GaInP/GaAs/InGaAsP; Room-temperature wafer bonding; Molecular beam epitaxy

Source: Sciencedirect

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Monolithic of SOI wafer waveguide and InP-laser with DVS-BCB coating and bonding

Highlights

•DVS-BCB polymer is investigated as a new material for silicon photonic chips' binding.
•The bonding layer is considered to having high transmittance (> 90%), and high temperature thermal stability.
•DVS-BCB polymer has the merits of low relative dielectric constant, lower baking temperature, and high optical clarity.
•DVS-BCB polymer films are easily produced using simple resist spin track equipment.

Si photonic is an optical information processing technology, including lasers, optical modulators, waveguide and a photodetector, and the light signal is performed by a basic photonic systems. In silicon microelectronics world, hundreds of millions of pieces of single components are integrated into a single platform to “parallel manufacturing” approach at the same time, the current optical transmission systems, the main technology is based on an independent element “series mode” manufacturing. Bonding technology is becoming realized comprising laser, an optical modulator, a waveguide and a photodetector system integration. Several conventional bonding methods have been developed a practical method. Wherein, the silicon substrate and the III–V group bonding, does not need to atomically smooth surface engagement, and the conventional bonding method is comparison with great flexibility, allowing the binding material or structure of the highest quality. Silicon has a high thermal conductivity and low light absorption, and the properties of these two substances silicon photonic application is very advantageous. Relatively low cost and high quality SOI wafers, making them an ideal platform to create a CMOS-compatible planar waveguide circuits. In this research, we focus on BCB coating, bonding, and adhesion observation for monolithic SOI wafer waveguide and InP-laser. The IV (Current–voltage) curve measured under the needle was found operating under current of approximately 8 mA at 1.5 V, LI (Optical power-Current) measurement results found at 36 mA operating maximum optical power of about 1.2 mW. This method owns the advantages of simple fabrication process, great performance and high adhesion efficient between BCB layer and Si waveguide.

Graphical abstract

Keywords: Silicon; Waveguide; InP-laser; BCB coating

Source: Sciencedirect

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2016年8月31日星期三

Electronic properties of Al/MoO3/p-InP enhanced Schottky barrier contacts

Highlights

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Barrier heights of Al/p-InP Schottky diodes were enhanced by inserting a MoO₃ layer.

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Electrical properties of the Al/MoO₃/p-InP Schottky diodes were investigated.

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Gaussian distribution was employed to explain the interface barrier inhomogeneity.

The Al/MoO₃/p-InP metal/insulator/semiconductor (MIS) and Al/p-InP metal/semiconductor (MS) Schottky Barrier Diodes (SBDs) have been fabricated to confirm Schottky barrier heights (SBHs) enhancement by inserting an ultrathin insulator layer between the MS contact. The current-voltage (I-V) and capacitance-voltage (C-V) measurements have been performed in the temperature range of 310–400 K. The modified Richardson plot gives the Richardson constant of 66.16 and 59.07 A cm^− 2 K^− 2 for Al/MoO₃/p-InP MIS SBDs and Al/p-InP MS SBDs, respectively, which are both close to the theoretical value known for p-InP (60 A cm^− 2 K^− 2). The SBHs for these two diodes have decreased with decreasing temperature while the ideality factor values have increased with decreasing temperature, obeying the barrier height Gaussian distribution model based on thermionic emission current theory. In addition, the experimental barrier height shows an obvious enhancement and ideality factor does not show a considerable increase, verifying that MoO₃ is a good candidate for the interfacial insulator layer.

Keywords:

Al/MoO₃/p-InP;
Schottky barrier heights;
Gaussian distribution;
Interfacial insulator layer

Source: Sciencedirect

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Three-dimensional InP-DHBT on SiGe-BiCMOS integration by means of Benzocyclobutene based wafer bonding for MM-wave circuits

Highlights

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Fabrication scheme for heterogenous Si-to-InP circuits on wafer level is described.

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Wafer-to-wafer alignment accuracy better than 4–8 μm after bonding obtained.

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Interconnects with excellent performance up to 220 GHz demonstrated.

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Palladium barrier necessary when combining Al-based technology with gold based one.

In order to benefit from the material properties of both InP-HBT and SiGe-BiCMOS technologies we have employed three-dimensional (3D) Benzocyclobutene (BCB)-based wafer bonding integration scheme. A monolithic wafer fabrication process based on transfer-substrate technology was developed, enabling the realization of complex hetero-integrated high-frequency circuits. Miniaturized vertical interconnects (vias) with low insertion loss and excellent broadband properties enable seamless transition between the InP and BiCMOS sub-circuits.

Keywords:

Heterojunction bipolar transistors;
Indium phosphide;
Monolithic integrated circuits;
Three-dimensional integrated circuits;
Wafer bonding;
Wafer scale integration

Source: sciencedirect

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2016年7月27日星期三

Native oxides formation and surface wettability of epitaxial III–V materials: The case of InP and GaAs

Highlights

•: Wettability of binary, MOVPE grown, III–V materials (GaAs, InP, InAs) was investigated as a function of age and surface treatment.
•: XPS study was performed, to reveal the surface native oxides composition.
•: No trivial correlation between the oxide thickness/type and water drop contact angle was observed.

2016年7月26日星期二

Modification of electrical properties of Au/n-type InP Schottky diode with a high-k Ba0.6Sr0.4TiO3 interlayer

Highlights

•: Electrical properties of Au/Ba_0.6Sr_0.4TiO₃/n-InP MIS diode have been analyzed.
•: Higher barrier height is obtained for the MIS diode compared to the MS diode.
•: Interface state density of MIS diode is lower than that of MS diode.
•: Poole-Frenkel mechanism is found dominating in both MS and MIS diodes.

2016年7月19日星期二

Easy adjustment structure and method for realizing InP based polarization beam splitter via Pockels effect dependence on crystal orientation

Abstract

We propose a novel adjustment structure and method for an InP-based polarization beam splitter/combiner by using the characteristic whereby the sign at the front of this term changes depending on the light propagation direction. To confirm the proposed principle of adjustment for our InP-based Mach–Zehnder interferometer polarization beam splitter/combiner, we fabricated a test sample that had an npin high-mesa waveguide structure with InGaAlAs/InAlAs multiple quantum wells. By using the test sample, we demonstrated the easy adjustment of an InP-based polarization beam splitter/combiner with the individual modulation of the TE and TM modes and showed that we can output TE/TM polarization at any port as desired.

Introduction

InP-based modulators/demodulators have become very attractive recently because of their small chip size, low driving voltage, and potential for monolithic integration with semiconductor active devices, such as laser/photo-diodes.1–10) And polarization-division multiplexing (PDM) is mainly used as a method for doubling the transmission capacity of digital coherent technology.1–10) Although several types of InP-based PDM components including a polarization beam splitter/combiner (PBS/PBC) have been reported,11–22) there have been few reports regarding the monolithic integration of PBS/PBCs on InP-based modulators/demodulators.9,10)This is because the integration of InP-based PBS/PBCs is hindered by their tight fabrication tolerances caused by their higher refractive index. To overcome this, a promising way to realize monolithic integration is to activate phase shifters placed on the InP-based PBS/PBC. However, even this approach presents a difficulty and the adjustment takes a long time. Therefore, there is a real need for an easy adjustment method.

In this paper, we propose a novel structure for an InP-based PBS/PBC using a Mach–Zehnder interferometer (MZI) that allows the easy individual adjustment of the TE mode properties of the PBS/PBC. Our proposed structure and adjustment method provides a high yield PBS for monolithic integration. In Sect. 2, we point out the difficulty of fabricating a PBS/PBC on an InP waveguide. After an explanation of the refractive index changes in an InP waveguide when an electric field is applied, we propose a novel structure and principle for an easily adjustable InP-based PBS/PBC. In Sect. 3, we describe a test sample fabricated to verify our concept. We then confirm that the sign in front of the Pockels effect terms for the refractive index change depends on the light propagation direction by comparing the experimental and fitted data with an estimation of the linear and the quadratic electro-optic coefficients of the waveguides that we used in the test sample. In Sect. 4, we demonstrate the easy adjustment of the PBS/PBC properties by using the proposed structure and method23) and show that we can output TE/TM polarization at any desired port.

Keywords

InP; PDM

2016年6月21日星期二

Determining the base resistance of InP HBTs: An evaluation of methods and structures

Highlights

•: The base resistance of InP DHBTs from different technologies is determined.
•: Single transistor terminal data based and test-structure methods are evaluated.
•: Error quantification and analysis is performed using compact model generated data.
•: Method improvements are suggested where possible.
•: Single transistor terminal data based methods are unreliable even under ideal circumstances.

2016年5月19日星期四

Native oxides formation and surface wettability of epitaxial III–V materials: The case of InP and GaAs

Highlights

•: Wettability of binary, MOVPE grown, III–V materials (GaAs, InP, InAs) was investigated as a function of age and surface treatment.
•: XPS study was performed, to reveal the surface native oxides composition.
•: No trivial correlation between the oxide thickness/type and water drop contact angle was observed.

2016年4月4日星期一

Wafer-scale self-organized InP nanopillars with controlled orientation for photovoltaic devices

A unique wafer-scale self-organization process for generation of InP nanopillars is demonstrated, which is based on maskless ion-beam etching (IBE) of InP developed to obtain the nanopillars, where the height, shape, and orientation of the nanopillars can be varied by controlling the processing parameters. The fabricated InP nanopillars exhibit broadband suppression of the reflectance, 'black InP,' a property useful for solar cells. The realization of a conformal p?n junction for carrier collection, in the fabricated solar cells, is achieved by a metalorganic vapor phase epitaxy (MOVPE) overgrowth step on the fabricated pillars. The conformal overgrowth retains the broadband anti-reflection property of the InP nanopillars, indicating the feasibility of this technology for solar cells. Surface passivation of the formed InP nanopillars using sulfur-oleylamine solution resulted in improved solar-cell characteristics. An open-circuit voltage of 0.71 V and an increase of 0.13 V compared to the unpassivated device were achieved.

Keywords

Wafer ;
InP;

Source:iopscience.iop.org

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2016年1月4日星期一

Si layer transfer to InP substrate using low-temperature wafer bonding

Using a low-temperature wafer bonding process, InP substrates are bonded to silicon-on-insulator (SOI) substrates at 220 °C. A combination of oxygen plasma and chemical treatment results in a direct contact bonding at room temperature. After the bonding process at 220 °C for 45 min, removal of the Si handle substrate by sacrificial etching of the buried oxide layer in SOI, results in a thin membrane of Si robustly bonded to InP. The thin Si membrane bonded to InP shows uniformly bonded interface under high-resolution electron microscopy. Micro-Raman analysis has also been carried out to study the bonded interface. I–V characteristics of the bonded structures suggest that such bonding and layer transfer processes are suitable for device integration.

PACS

81.05Ea;
81.65−b;
78.55−m;
78.30−j

Keywords

Wafer bonding;
SOI;
InP;
Oxygen plasma;
Micro-Raman;
Thin-film
Source:Sciencedirect
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2016年9月26日星期一

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2016年9月11日星期日

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2016年8月31日星期三

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2016年7月27日星期三

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2016年7月26日星期二

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2016年7月19日星期二

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Introduction

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2016年6月21日星期二

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2016年5月19日星期四

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2016年4月4日星期一

2016年1月4日星期一

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