Remarkable defect annealing in both p-type
and n-type InP following 1-MeV electron irradiation has been observed at room
temperature, resulting in the recovery of InP solar cell properties. The
room-temperature annealing characteristics of radiation-induced defects in InP
were studied by measuring InP solar cell photovoltaic properties in conjunction
with deep-level transient spectroscopy. The recovery of InP solar cell
radiation damage is found to be due mainly to the room-temperature annihilation
of radiation-induced recombination centers such as an H4 trap (Ev+0.37 eV) in
p-InP. Moreover, the room-temperature annealing rate of radiation-induced
defects in InP was found to be proportional to the 2/3 power of the carrier
concentration. Additionally, a model has been considered in which point defects
diffuse to sinks through impurities so as to annihilate and bind with
impurities, thus forming point defect-impurity complexes.
Source:IOPscience
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