Integration of high quality single
crystalline InP thin film on Si substrate has potential applications in
Si-based photonics and high-speed electronics. In this work, the exfoliation of
a 634 nm crystalline InP layer from the bulk substrate was achieved by
sequential implantation of He ions and H ions at room temperature. It was found
that the sequence of He and H ion implantations has a decisive influence on the
InP surface blistering and exfoliation, which only occur in the InP
pre-implanted with He ions. The exfoliation efficiency first increases and then
decreases as a function of H ion implantation fluence. A kinetics analysis of
the thermally activated blistering process suggests that the sequential
implantation of He and H ions can reduce the InP thin film splitting thermal
budget dramatically. Finally, a high quality 2 inch InP-on-Si(100)
hetero-integration wafer was fabricated by He and H ion sequential implantation
at room temperature in combination with direct wafer bonding.
Source:IOPscience
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