InP wafer: 六月 2018

2018年6月25日星期一

A combination of capillary and dielectrophoresis-driven assembly methods for wafer scale integration of carbon-nanotube-based nanocarpets

The wafer scale integration of carbon nanotubes (CNT) remains a challenge for electronic and electromechanical applications. We propose a novel CNT integration process relying on the combination of controlled capillary assembly and buried electrode dielectrophoresis (DEP). This process enables us to monitor the precise spatial localization of a high density of CNTs and their alignment in a pre-defined direction. Large arrays of independent and low resistivity (4.4 × 10−5 Ω m) interconnections were achieved using this hybrid assembly with double-walled carbon nanotubes (DWNT). Finally, arrays of suspended individual CNT carpets are realized and we demonstrate their potential use as functional devices by monitoring their resonance frequencies (ranging between 1.7 and 10.5 MHz) using a Fabry–Perot interferometer.

Source:IOPscience

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2018年6月5日星期二

A Single Mode Hybrid III–V/Silicon On-Chip Laser Based on Flip-Chip Bonding Technology for Optical Interconnection*

A single mode hybrid III–V/silicon on-chip laser based on the flip-chip bonding technology for on-chip optical interconnection is demonstrated. A single mode Fabry—Pérot laser structure with micro-structures on an InP ridge waveguide is designed and fabricated on an InP/AlGaInAs multiple quantum well epitaxial layer structure wafer by using i-line lithography. Then, a silicon waveguide platform including a laser mounting stage is designed and fabricated on a silicon-on-insulator substrate. The single mode laser is flip-chip bonded on the laser mounting stage. The lasing light is butt-coupling to the silicon waveguide. The laser power output from a silicon waveguide is 1.3mW, and the threshold is 37mA at room temperature and continuous wave operation.