Electrical properties of highly rectifying
Pt/InP junctions fabricated by electrophoretic deposition of Pt nanoparticles
are investigated at different temperatures by the measurement of
current–voltage and capacitance–voltage characteristics. The forward I–V characteristics of the junction are described by
thermionic emissions theory at low forward bias (3kT/q < V < 0.2 V) and
by tunnelling current transport through the narrowed space charge region at
forward bias V > 0.2 V. The reverse I–V characteristics are analysed in the
scope of the thermionic emission model in the presence of shunt resistance.
Electrical characteristics of these diodes are sensitive to gas mixtures with a
low hydrogen concentration and show an extremely fast response and recovery
time.
Source:IOPscience
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