The effects of arsenic (As) and gallium (Ga)
incorporation in InP layers in GaInAs/InP heterostructures grown by
low-pressure metal-organic vapor phase epitaxy (LP-MOVPE) on lattice parameter
and band-gap energy of InP layers were studied. It was found that As and Ga
incorporation is prolonged during InP growth after arsine (AsH3) and
triethylgallium (TEG) flows are turned off, resulting in a lowering of the band
gap energy and change in the lattice parameter of the InP layers. This
incorporation is considered to originate from both desorption and diffusion of
their outgassing sources produced during the growth of a thick GaInAs layer.
Source:IOPscience
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