Improved InAsP metamorphic layers grown on an InP substrate using underlying InP grown at low temperatures

The use of an InP epitaxial layer grown at low temperatures before the growth of a step-graded InAsP metamorphic buffer has been shown to provide a large improvement in the crystal quality of the final metamorphic layer. The improvement is evidenced by over an order of magnitude increase in photoluminescence intensity as well as a large reduction of the mosaic spread and the overall tilt of the relaxed layers.

Source:IOPscience

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High Uniform Waveguide Photodiodes Fabricated on a 2-inch InP Wafer with Low Darkcurrent and High Responsivity

We have fabricated waveguide photodiodes with high uniform characteristics on a 2-inch InP wafer introducing a novel process. The 2-inch wafer fabrication procedure was carried out successfully by utilizing SiNx deposition on the back of the wafer in order to compensate wafer warp. Almost all the measured waveguide photodiodes exhibited low darkcurrent (average 419 pA, σ= 49 pA at 10 V reverse bias voltage) throughout the 2-inch wafer, and high responsivity of 0.987 A/W (σ=0.011 A/W) was obtained in a consecutive 60-channel array at the input wavelength of 1.3 µm. In addition, uniformity of frequency response was also confirmed.

Source:IOPscience

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send us email at angel.ye@powerwaywafer.com or powerwaymaterial@gmail.com