Electronic properties of Al/MoO3/p-InP enhanced Schottky barrier contacts

Highlights

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Barrier heights of Al/p-InP Schottky diodes were enhanced by inserting a MoO₃ layer.

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Electrical properties of the Al/MoO₃/p-InP Schottky diodes were investigated.

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Gaussian distribution was employed to explain the interface barrier inhomogeneity.

The Al/MoO₃/p-InP metal/insulator/semiconductor (MIS) and Al/p-InP metal/semiconductor (MS) Schottky Barrier Diodes (SBDs) have been fabricated to confirm Schottky barrier heights (SBHs) enhancement by inserting an ultrathin insulator layer between the MS contact. The current-voltage (I-V) and capacitance-voltage (C-V) measurements have been performed in the temperature range of 310–400 K. The modified Richardson plot gives the Richardson constant of 66.16 and 59.07 A cm^− 2 K^− 2 for Al/MoO₃/p-InP MIS SBDs and Al/p-InP MS SBDs, respectively, which are both close to the theoretical value known for p-InP (60 A cm^− 2 K^− 2). The SBHs for these two diodes have decreased with decreasing temperature while the ideality factor values have increased with decreasing temperature, obeying the barrier height Gaussian distribution model based on thermionic emission current theory. In addition, the experimental barrier height shows an obvious enhancement and ideality factor does not show a considerable increase, verifying that MoO₃ is a good candidate for the interfacial insulator layer.

Keywords:

• Al/MoO₃/p-InP;
• Schottky barrier heights;
• Gaussian distribution;
• Interfacial insulator layer

Source: Sciencedirect

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Three-dimensional InP-DHBT on SiGe-BiCMOS integration by means of Benzocyclobutene based wafer bonding for MM-wave circuits

Highlights

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Fabrication scheme for heterogenous Si-to-InP circuits on wafer level is described.

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Wafer-to-wafer alignment accuracy better than 4–8 μm after bonding obtained.

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Interconnects with excellent performance up to 220 GHz demonstrated.

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Palladium barrier necessary when combining Al-based technology with gold based one.

In order to benefit from the material properties of both InP-HBT and SiGe-BiCMOS technologies we have employed three-dimensional (3D) Benzocyclobutene (BCB)-based wafer bonding integration scheme. A monolithic wafer fabrication process based on transfer-substrate technology was developed, enabling the realization of complex hetero-integrated high-frequency circuits. Miniaturized vertical interconnects (vias) with low insertion loss and excellent broadband properties enable seamless transition between the InP and BiCMOS sub-circuits.

Keywords:  

• Heterojunction bipolar transistors;
• Indium phosphide;
• Monolithic integrated circuits;
• Three-dimensional integrated circuits;
• Wafer bonding;
• Wafer scale integration

Source: sciencedirect

If  you are more interesting in InP wafer, please send emails to us: sales@powerwaywafer.com and visit our website: www.powerwaywafer.com