Direct Bonding between InP Substrate and Magnetooptic Waveguides

Wafer direct bonding was demonstrated between InP and magnetooptic materials. The effects of chemical treatment of two wafers before placing them into contact were investigated in order to enhance the durability of the bonded wafers through the various device fabrication processes. Phosphoric acid etching at a low temperature proved to be the most suitable treatment for the bonding between InP and gadolinium gallium garnet Gd3Ga5O12. In the case of this treatment, the bonding was studied between a planar InP substrate and magnetooptic waveguides on the garnet films.

Source:IOPscience

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Anisotropy and Lateral Homogeneity of InP-Mass Transport

InP-mass transport performed in a conventional liquid-phase epitaxial (LPE) system using (111)B-InP protection wafers was investigated by scanning-electron microscopy and wavelength-selective transmission-infrared (IR) microscopy. Refilling of undercut-etched mesa stripes of a length of 2 mm was found to be laterally homogeneous within ±6% when the process temperature was 721°C. In the <100> direction, an enhanced growth rate compared to that in the <110> direction was found. This anisotropy tended to disappear when the distance from the wafer to the protection wafer was reduced.

Source:IOPscience

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send us email at angel.ye@powerwaywafer.com or powerwaymaterial@gmail.com