InP wafer: 七月 2018

2018年7月24日星期二

Direct Wafer Bonding of GaInAsP/InP Membrane Structure on Silicon-on-Insulator Substrate

Wafer bonding technology was investigated to integrate active photonic devices on a silicon-on-insulator (SOI) substrate for highly compact photonic integrated circuits. A single-quantum-well (SQW) GaInAsP/InP membrane structure bonded onto an SOI substrate was successfully obtained by a direct bonding with thermal annealing at 300–450 °C in H2 atmosphere. The photoluminescence intensity of the SQW membrane structure did not degrade after this direct bonding and its spectral shape did not change. This wafer bonding technique can be applied to the realization of direct optical coupling using SOI passive waveguides from a membrane's active region.

Source:IOPscience

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2018年7月1日星期日

On-wafer de-embedding techniques from 0.1 to 110 GHz*

On-wafer S-parameter de-embedding techniques from 0.1 to 110 GHz are researched. The solving results of thru-reflect-line (TRL) and line-reflect-match (LRM) de-embedding algorithms, when the input and output ports are asymmetric, are given. The de-embedding standards of TRL and LRM are designed on an InP substrate. The validity of the de-embedding results is demonstrated through two passive components, and the accuracy of TRL and LRM de-embedding techniques is compared from 0.1 to 110 GHz. By utilizing an LRM technique in 0.1–40 GHz and a TRL technique in 75–110 GHz, the intrinsic S-parameters of active device HBT in two frequency bands are obtained, and comparisons of the extracted small-signal current gain and the unilateral power gain before and after de-embedding are presented. The whole S-parameters of actual DUT from 0.1 to 110 GHz can be obtained by interpolation.