Wafer bonding technology was investigated to integrate active photonic devices on a silicon-on-insulator (SOI) substrate for highly compact photonic integrated circuits. A single-quantum-well (SQW) GaInAsP/InP membrane structure bonded onto an SOI substrate was successfully obtained by a direct bonding with thermal annealing at 300–450 °C in H atmosphere. The photoluminescence intensity of the SQW membrane structure did not degrade after this direct bonding and its spectral shape did not change. This wafer bonding technique can be applied to the realization of direct optical coupling using SOI passive waveguides from a membrane's active region.
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