High-quality InGaAsP/InP multi-quantum wells
(MQWs) on the isolated areas of indium phosphide on silicon necessary for realizing
a monolithically integrated silicon laser is achieved. Indium phosphide layer
on silicon, the pre-requisite for the growth of quantum wells is achieved via
nano-epitaxial lateral overgrowth (NELOG) technique from a defective seed
indium phosphide layer on silicon. This technique makes use of epitaxial
lateral overgrowth (ELOG) from closely spaced (1 µm) e-beam
lithography-patterned nano-sized openings (~300 nm) by low-pressure hydride
vapor phase epitaxy. A silicon dioxide mask with carefully designed opening
patterns and thickness with respect to the opening width is used to block the
defects propagating from the indium phosphide seed layer by the so-called
necking effect. Growth conditions are optimized to obtain smooth surface
morphology even after coalescence of laterally grown indium phosphide from
adjacent openings. Surface morphology and optical properties of the NELOG
indium phosphide layer are studied using atomic force microscopy,
cathodoluminescence and room temperature µ-photoluminescence (µ-PL)
measurements. Metal organic vapor phase epitaxial growth of InGaAsP/InP MQWs on
the NELOG indium phosphide is conducted. The mask patterns to avoid loading
effect that can cause excessive well/barrier thickness and composition change
with respect to the targeted values is optimized. Cross-sectional transmission
electron microscope studies show that the coalesced NELOG InP on Si is
defect-free. PL measurement results indicate the good material quality of the
grown MQWs. Microdisk (MD) cavities are fabricated from the MQWs on ELOG layer.
PL spectra reveal the existence of resonant modes arising out of these MD
cavities. A mode solver using finite difference method indicates the pertinent
steps that should be adopted to realize lasing.
Source:IOPscience
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