Indium phosphide thin films were grown onto
glass substrates by RF magnetron sputtering. In this paper, we present a study
on the role of argon pressure and rf power on magnetron sputtered InP films.
These sputtering parameters are shown to affect the deposition rate, structure,
morphology, electrical and optical properties of InP films. Single-phase,
nearly stoichiometric and polycrystalline films exhibiting zinc blende
structure with strong preferred orientation along (1 1 1) were observed at an
argon pressure of 0.4 Pa, by keeping the substrate temperature (448 K) and RF
power (150 W) constant. Hall measurements indicated n-type conductivity in InP
films. The optical absorption studies indicated a direct band gap of 1.35 eV.
Source:IOPscience
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