Semi-insulating and semiconducting InP single crystals without intentional doping and doped with Fe, co-doped with Zn and Ti and doped with Mn were grown using the Czochralski technique. Hall effect measurements and deep level transient spectroscopy were used to characterize samples cut from these crystals. Two electron traps were found in undoped InP whose concentration was suppressed in Mn-doped InP. Binding energies of Fe, Ti and Mn deep level impurities were determined from the temperature-dependent Hall effect measurements. The curves of Hall coefficient versus reciprocal temperature decline from straight lines at low temperatures for InP:Fe and for InP:Ti samples due to electron and hole mixed conductance. The resistivity of InP:Ti is equal to about 106 Ωm at the lowered temperature of 230 K. This value of resistivity and the small hole capture rate of Ti makes this material suitable for radiation detection at the lowered temperature.
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