Semi-insulating and semiconducting InP single
crystals without intentional doping and doped with Fe, co-doped with Zn and Ti
and doped with Mn were grown using the Czochralski technique. Hall effect
measurements and deep level transient spectroscopy were used to characterize
samples cut from these crystals. Two electron traps were found in undoped InP
whose concentration was suppressed in Mn-doped InP. Binding energies of Fe, Ti
and Mn deep level impurities were determined from the temperature-dependent
Hall effect measurements. The curves of Hall coefficient versus reciprocal
temperature decline from straight lines at low temperatures for InP:Fe and for
InP:Ti samples due to electron and hole mixed conductance. The resistivity of
InP:Ti is equal to about 106 Ωm at the lowered temperature of 230 K. This value
of resistivity and the small hole capture rate of Ti makes this material
suitable for radiation detection at the lowered temperature.
Source:IOPscience
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