Crystalline Defects in InP-to-Silicon Direct Wafer Bonding
InP-to-Si wafer bonding has been proposed as a way of circumventing the problems associated with lattice-mismatch in heteroepitaxial growth. Therefore, in this study the dislocation density and material degradation in InP-to-Si hydrophobic bonding are evaluated. Both interface and InP bulk defects were studied using IR-transmission, atomic force microscopy (AFM) and defect-etching. When the bonded wafers were annealed below 300°C, no volume dislocations were generated in InP. However, when annealing above 300°C, the thermal mismatch stress induced large numbers of volume dislocations in InP. It was also shown that hydrophobic InP-to-Si wafer bonding unfortunately requires high-temperature annealing to achieve sufficient bonding-strength. However, a considerably lower dislocation density was observed in InP-to-Si wafer bonding than that in InP heteroepitaxial growth on Si. Also, when the samples were annealed above 400°C, asymmetric voids emerged at the interface. These voids are associated with the nucleation of indium droplets which causes microcavities at the interface where volume dislocations can sweep-out, forming surface steps. The voids completely disappeared when channel-patterned interfaces were used.
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