Epitaxial structures based on InP are
widely used to manufacture a number of devices such as microwave transistors,
light-emitting diodes, lasers and Gunn diodes. However, their temporary
instability caused by heterogeneity of resistivity along the layer thickness
and the influence of various external or internal factors prompts the need for
the development of a new reliable technology for their preparation. Weak doping
by Yb, Al and Sn together with modulation of the cooling rate applied to
prepare InP epitaxial layers is suggested to be adopted within the liquid phase
epitaxy (LPE) method. The experimental results confirm the optimized conditions
created to get a uniform electron concentration in the active n-InP layer. A
sharp profile of electron concentration in the n+-InP(substrate)/n-InP/n+-InP
epitaxial structure was observed experimentally at the proposed modulated
cooling rate of 0.3 °С–1.5 °С min−1. The proposed technological method can be
used to control the electrical and physical properties of InP epitaxial layers
to be used in Gunn diodes.
Source:IOPscience
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