We have fabricated waveguide photodiodes with high uniform characteristics on a 2-inch InP wafer introducing a novel process. The 2-inch wafer fabrication procedure was carried out successfully by utilizing SiNx deposition on the back of the wafer in order to compensate wafer warp. Almost all the measured waveguide photodiodes exhibited low darkcurrent (average 419 pA, σ= 49 pA at 10 V reverse bias voltage) throughout the 2-inch wafer, and high responsivity of 0.987 A/W (σ=0.011 A/W) was obtained in a consecutive 60-channel array at the input wavelength of 1.3 µm. In addition, uniformity of frequency response was also confirmed.
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