A semi-insulating InP:Fe wafer has been investigated by Hall effect measurements. A 2-inch semi-insulating InP:Fe wafer was divided into 63 squares of 5×5 mm2, and 17 samples were selected along the <011> and <01> directions to determine the characteristics of the whole wafer. The resistivity, Hall mobility, Hall coefficient, and carrier concentration at room temperature were in the range of 2.1–4.6×107 ohmcm, 1700–3000 cm2/Vsec, 5.5–14×1010 cm3/coul, and 4.5–11×107 cm3, respectively. From the measured Hall mobilities the impurity scattering mobilities were calculated and the neutral impurity concentration was estimated as to be 0.85–2.6×1016 cm-3. The resistivity distribution revealed that the 17 samples can be classified into 3 groups.
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