Si photonic is an optical information processing technology,
including lasers, optical modulators, waveguide and a photodetector, and the
light signal is performed by a basic photonic systems. In silicon
microelectronics world, hundreds of millions of pieces of single components are
integrated into a single platform to “parallel manufacturing” approach at the
same time, the current optical transmission systems, the main technology is
based on an independent element “series mode” manufacturing. Bonding technology
is becoming realized comprising laser, an optical modulator, a waveguide and a
photodetector system integration. Several conventional bonding methods have been
developed a practical method. Wherein, the silicon substrate and the III–V group
bonding, does not need to atomically smooth surface engagement, and the
conventional bonding method is comparison with great flexibility, allowing the
binding material or structure of the highest quality. Silicon has a high thermal
conductivity and low light absorption, and the properties of these two
substances silicon photonic application is very advantageous. Relatively low
cost and high quality SOI wafers, making them an ideal platform to create a
CMOS-compatible planar waveguide circuits. In this research, we focus on BCB
coating, bonding, and adhesion observation for monolithic SOI wafer waveguide
and InP-laser. The IV (Current–voltage) curve measured under the needle was
found operating under current of approximately 8 mA at 1.5 V, LI (Optical
power-Current) measurement results found at 36 mA operating maximum optical
power of about 1.2 mW. This method owns the advantages of simple fabrication
process, great performance and high adhesion efficient between BCB layer and Si
waveguide.
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