Enhanced photoluminescence emission from bandgap shifted InGaAs/InGaAsP/InP microstructures processed with UV laser quantum well intermixing

In spite of many years of research, the quantum well intermixing technique has not been able to deliver multibandgap III–V semiconductor wafers at highly attractive costs. We report that UV laser irradiation of InGaAs/InGaAsP/InP quantum well (QW) microstructures in deionized water and rapid thermal annealing (RTA) allows achieving, mask-free, wafers with blueshifted photoluminescence (PL) emission of intensity exceeding almost 10× that of the RTA-only wafers. Our calculations indicate that a ~40 nm thick InOx layer formed on top of the investigated microstructure induces compressive strain in the QW region and leads to this record-high enhanced PL amplitude.

Source:IOPscience

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