Mechanical Thinning of InP Wafer by Grinding

 wafers of 2 in. diameter have been successfully ground to a thickness of 100 μm by mechanical grinding with cup‐type diamond wheels. This process can be applied, for the first time, to the mass production of  optoelectronic devices, similar to the technology for  devices based on the wafer‐rotating downfeed grinding method. The phenomena occurring in the grinding of  were similar to those of , such as a rapid transition between mirror grinding and rough grinding, and a large wafer bow. However, the deformed layer due to the grinding of  was discovered to be thicker than that of , because  is a little more fragile. Still, it was thin enough, less than 1.5 μm, to be eliminated by slight chemical etching. The finished surface roughness in mirror grinding was also greater, but 0.15 μm  was obtained with 3 μm diamond grains, which is small enough to be applied in device fabrications.

Source:IOPscience

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