Wafer Stage Staining Technique for Detection of Zn Out‐Diffusion in InGaAsP / InP Lasers

We have developed a novel staining technique to detect Zn out‐diffusion from the cladding layer into the semi‐insulating region in  laser structures. In this staining technique an Au (400Å thick) coating was applied to wafer and an aqueous  solution was used to stain the Au‐coated wafer. This technique can clearly resolve the Zn out‐diffusion profile in laser structures, and it cannot be achieved by the conventional  staining process. This is the only available technique one can use to detect zinc out‐diffusion from the p‐cladding layer into semi‐insulating  at the wafer stage and prior to device fabrication. Characterization of zinc diffusion by our technique can provide crystal growers with a timely feedback to further optimize the growth parameters.

Source:IOPscience

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