Room-temperature operation of GaInAsP lasers epitaxially grown on wafer-bonded InP/Si substrate
An epitaxially grown GaInAsP/InP double-hetero laser diode (LD) has been demonstrated on a wafer-bonded InP/Si substrate for the first time. The as-grown structure was optically active and exhibited a photoluminescence intensity comparable to that grown on an InP wafer as a reference. Electrodes were formed on both the p-side contact layer and the n-Si underside to fabricate Fabry–Perot LD chips. During these processes, the InP layer remained bonded to the underlying Si substrate. Electrically pumped lasing emission was observed at room temperature under a pulse regime. These results indicate the potential for the high-density integration of InP-based LDs as a light source for optical interconnections.
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