The distribution of the compensating Fe acceptor in semi-insulating (SI) InP wafers is measured in both its charge states, (Fe2+) and (Fe3+). In the wafers studied the inhomogeneities of the material are due to the inhomogeneous distribution of the activated Fe, rather than to that of the residual shallow donors. According to the data, open questions exist with regard to the absolute values of the optical cross sections sigma p and sigma n of Fe in InP.
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