InP-mass transport performed in a conventional liquid-phase epitaxial (LPE) system using (111)B-InP protection wafers was investigated by scanning-electron microscopy and wavelength-selective transmission-infrared (IR) microscopy. Refilling of undercut-etched mesa stripes of a length of 2 mm was found to be laterally homogeneous within ±6% when the process temperature was 721°C. In the <100> direction, an enhanced growth rate compared to that in the <110> direction was found. This anisotropy tended to disappear when the distance from the wafer to the protection wafer was reduced.
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