Carrier lifetime maps and distributions of doped n-InGaAs in a MBE-grown p-InP/n-InGaAs/n-InP double heterostructure (DH) were measured at 300 K and 85 K using the μ-PCD lifetime screening technique. The theoretical considerations required in this technique are discussed in detail. The average carrier lifetimes are 168.2 ns and 149.4 ns at 300 K and 85 K, respectively. The results are consistent with those of ZnS/n-InGaAs/n-InP DHs. InGaAs lifetime mapping of the InP/InGaAs/InP DH is easily obtained without destruction by μ-PCD carrier lifetime measurement. Therefore, it could be a potential method to characterize the uniformity of the wafers, which is necessary to fabricate InGaAs focal plane arrays (FPAs).